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Abstract Flexible optoelectronic devices have attracted considerable attention due to their low weight, portability, and ease of integration with other devices. However, major issues still exist: they are subject to repeated stresses, which often leads to damage; and the current fabrication methods such as photolithography and nano-imprint lithography can be very time-consuming or costly. This work aims to develop a novel cost-effective and time-efficient laser metasurface fabrication (LMF) technique for production of flexible optoelectronic devices. The experimental results have shown that the laser patterned flexible surfaces exhibit high visible transmittance, low sheet resistance, and extraordinary mechanical durability under repeated bending cycles. The laser patterned flexible surfaces have also demonstrated the potential to be utilized as heaters, which renders them new de-icing or de-fogging applications. This innovative laser patterning method will provide a new avenue for fabrication of multifunctional optoelectronic devices. 

Trigonal tellurium (Te) is a chiral semiconductor that lacks both mirror and inversion symmetries, resulting in complex band structures with Weyl crossings and unique spin textures. Detailed time-resolved polarized reflectance spectroscopy is used to investigate its band structure and carrier dynamics. The polarized transient spectra reveal optical transitions between the uppermost spin-splitH₄andH₅and the degenerateH₆valence bands (VB) and the lowest degenerateH₆conduction band (CB) as well as a higher energy transition at the L-point. Surprisingly, the degeneracy of theH₆CB (a proposed Weyl node) is lifted and the spin-split VB gap is reduced upon photoexcitation before relaxing to equilibrium as the carriers decay. Using ab initio density functional theory (DFT) calculations, we conclude that the dynamic band structure is caused by a photoinduced shear strain in the Te film that breaks the screw symmetry of the crystal. The band-edge anisotropy is also reflected in the hot carrier decay rate, which is a factor of two slower along the c-axis than perpendicular to it. The majority of photoexcited carriers near the band-edge are seen to recombine within 30 ps while higher lying transitions observed near 1.2 eV appear to have substantially longer lifetimes, potentially due to contributions of intervalley processes in the recombination rate. These new findings shed light on the strong correlation between photoinduced carriers and electronic structure in anisotropic crystals, which opens a potential pathway for designing novel Te-based devices that take advantage of the topological structures as well as strong spin-related properties.

 

Deformable energy devices capable of efficiently scavenging ubiquitous mechanical signals enable the realization of self-powered wearable electronic systems for emerging human-integrated technologies. Triboelectric nanogenerators (TENGs) utilizing soft polymers with embedded additives and engineered dielectric properties emerge as ideal candidates for such applications. However, the use of solid filler materials in the state-of-the-art TENGs limits the devices' mechanical deformability and long-term durability. The current structural design for TENGs faces the dilemma where the enhanced dielectric constant of the TENG's contact layer leads to an undesirable saturation of the surface charge density. Here, we present a novel scheme to address the above issues, by exploring a liquid-metal-inclusion based TENG (LMI-TENG) where inherently deformable core–shell LMIs are incorporated into wearable high-dielectric-constant polymers. Through a holistic approach integrating theoretical and experimental efforts, we identified the parameter space for designing an LMI-TENG with co-optimized output and mechanical deformability. As a proof of concept, we demonstrated an LMI-TENG based wireless media control system for a self-powered user interface. The device architecture and design scheme presented here provide a promising solution towards the realization of self-powered human-integrated technologies.